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The potential barrier height at the interface formed by a metal contact andmultiple one-dimensional (1D) quasi-ballistic channels in field-effecttransistors (FETs) is evaluated across different carbon nanotube and nanowiredevice technologies by means of a Landauer-B\"uttiker-based extractionmethodology (LBM) adapted for multiple 1D-channels. The extraction methodologyyields values for an effective Schottky barrier height and a gate couplingcoefficient, an indicator of the device working at the quantum capacitancelimit. The novel LBM-based approach embracing the mechanisms in 1D electronicsis compared to the conventional activation energy method not considering sucheffects. The latter approach underestimates the potential barrier height atmetal-channel interfaces in comparison to the novel methodology. A teststructure based on a displaced gate device is proposed based on numericaldevice simulation results towards an improved accuracy of the method.

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels