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We grow $^{28}$Si/SiGe heterostructures by reduced-pressure chemical vapordeposition and terminate the stack without an epitaxial Si cap but with anamorphous Si-rich layer obtained by exposing the SiGe barrier to dichlorosilaneat 500 {\deg}C. As a result, $^{28}$Si/SiGe heterostructure field-effecttransistors feature a sharp semiconductor/dielectric interface and support atwo-dimensional electron gas with enhanced and more uniform transportproperties across a 100 mm wafer. At T = 1.7 K we measure a high mean mobilityof (1.8$\pm$0.5)$\times$10$^5$ cm$^2$/Vs and a low mean percolation density of(9$\pm$1)$\times$10$^{10}$ cm$^{-2}$. From the analysis of Shubnikov-de Haasoscillations at T = 190 mK we obtain a long mean single particle relaxationtime of (8.1$\pm$0.5) ps, corresponding to a mean quantum mobility and quantumlevel broadening of (7.5$\pm$0.6)$\times$10$^4$ cm$^{2}$/Vs and (40$\pm$3)$\mu$eV, respectively, and a small mean Dingle ratio of (2.3$\pm$0.2),indicating reduced scattering from long range impurities and a low-disorderenvironment for hosting high-performance spin-qubits.

Wafer-scale low-disorder 2DEG in $^{28}$Si/SiGe without an epitaxial Si cap