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The photoluminescence and spin properties of ensembles of color centers insilicon carbide are enhanced by fabricating optically isolated slab waveguidestructures and carefully controlling annealing and cooling conditions. We findthat the photoluminescence signal of an ensemble of implanted defects isenhanced in slab waveguides by an order of magnitude over identically implantedbulk defects. The slab waveguide-enhanced photoluminescence of several defectspecies is used to study recombination and diffusion in the presence of thermalannealing with both rapid quench cooling and a longer return to ambientconditions. The confined mechanical geometry of the thin film is exploited tomeasure the spin-strain coupling of the negatively charged silicon monovacancy.The methods in this work can be used to exercise greater control onnear-surface emitters in silicon carbide and better understand and control theeffects of strain on spin measurements of silicon carbide based color centers.

Optical and Strain Stabilization of Point Defects in Silicon Carbide