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In this work, the origin of the low free electron mobility in SiC MOSFETs isinvestigated using the scattering theory of two-dimensional electron gases. Wefirst establish that neither phonon scattering nor Coulomb scattering can bethe cause of the low observed mobility in SiC MOSFETs; we establish this factby comparing the theoretically calculated mobility considering these effectswith experimental observations. By considering the threshold voltages and theeffective field dependence of the mobility in SiC MOSFETs, it is concluded thatthe scattering centers of the dominant mechanism are electrically neutral andexhibit a short-range scattering potential. By considering charge distributionaround a neutral defect at the interface, it is established that an electricdipole induced by the defect can act as a short-range scattering potential. Wethen calculate the mobility in SiC MOSFETs assuming that there exist a highdensity of dipoles at the interface. The calculated dipole-scattering-limitedmobility shows a similar dependence on the effective field dependence to thatobserved in experimental results. Thus, we conclude that scattering induced bya high density of electric dipoles at the interface is dominant cause of thelow mobility in SiC MOSFETs.

Dipole Scattering at the Interface: The Origin of Low Mobility observed in SiC MOSFETs