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Among the wide-bandgap compound semiconductors, gallium nitride is the mostwidely available material due to its prevalence in the solid state lighting andhigh-speed/high-power electronics industries. It is now known that GaN is oneof only a handful of materials to host color centers that emit quantum light atroom temperature. In this paper, we report on a bright color center in asemi-polar gallium nitride substrate, emitting at room temperature in thenear-infrared. We show that a hemispherical solid immersion lens, near indexmatched to the semiconductor, can be used to enhance the photon collectionefficiency by a factor of $4.3\pm0.1$, whilst improving the lateral resolutionby a factor equal to the refractive index of the lens.

Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens