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In this paper we report on the development of a fast high-voltage switch,which is based on two enhancement mode N-channel Silicon Carbide Metal OxideSemiconductor Field-Effect Transistors in push-pull configuration. The switchis capable of switching high voltages up to 600 V on capacitive loads with riseand fall times on the order of 10 ns and pulse widths $\leq$ 20 ns. Using thisswitch it was demonstrated that from the charge state distribution of bunchesof highly charged ions ejected from an electron beam ion trap with a specifickinetic energy, single charge states can be separated by fast switching of thehigh voltage applied to a Bradbury-Nielsen Gate with a resolving power of about100.

Fast Silicon Carbide MOSFET based high-voltage push-pull switch for charge state separation of highly charged ions with a Bradbury-Nielsen Gate