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We report results of an investigation of low-frequency excess noise inhigh-current diamond diodes. It was found that the electronic excess noise ofthe diamond diodes is dominated by generation - recombination noise, whichreveals itself either as Lorentzian spectral features or as a 1/f noisespectrum (f is the frequency). The generation - recombination bulges arecharacteristic for diamond diodes with lower turn-on voltages. The noisespectral density dependence on forward current, I, reveals three distinctiveregions in all examined devices - it scales as I^2 at the low (I<10 uA) andhigh (I>10 mA) currents, and, rather unusually, remain nearly constant at theintermediate current range. The characteristic trap time constants, extractedfrom the noise data, reveal a uniquely strong dependence on current.Interestingly, the performance of the diamond diodes improves with increasingtemperature. The obtained results are important for development of noisespectroscopy-based approaches for device reliability assessment for thehigh-power diamond electronics.

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment