English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$= -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effecttransistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$.This low disorder 2D hole system shows tunable fractional quantum Hall effectat low density and low magnetic field. The low-disorder and small effectivemass (0.068$m_e$) defines lightly-strained germanium as a basis to tune thestrength of the spin-orbit coupling for fast and coherent quantum hardware.

Lightly-strained germanium quantum wells with hole mobility exceeding one million