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Spinel MgAl2O4 and family oxides are emerging barrier materials useful formagnetic tunnel junctions (MTJs). We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox. Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT. Thedifferential conductance spectra were symmetric with bias polarity, and thespectrum in the parallel magnetization state at low temperature demonstratesignificant peaks within broad local minima at |0.2-0.6| V, indicating improvedbarrier interfaces by the Mg4Al-Ox barrier. This study demonstrates that TMRratios in Fe(001)-MTJs can still be improved.

Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions