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Phase change superlattice is one of the emerging material technologies forultralow-power phase change memories. However, the resistance switchingmechanism of phase change superlattice is still hotly debated. Early electricalmeasurements and recent materials characterizations have suggested that theKooi phase is very likely to be the as-fabricated low-resistance state. Due tothe difficulty in in-situ characterization at atomic resolution, the structureof the electrically switched superlattice in its high-resistance state is stillunknown and mainly investigated by theoretical modellings. So far, there hasbeen no simple model that can unify experimental results obtained fromdevice-level electrical measurements and atomic-level materialscharacterizations. In this work, we carry out atomistic transport modellings ofthe phase change superlattice device and propose a simple mechanism accountingfor its high resistance. The modeled high-resistance state is based on theinterfacial phase changed superlattice that has previously been mistaken forthe low-resistance state. This work advances the understanding of phase changesuperlattice for emerging memory applications.

Internal reverse-biased p-n junctions: a possible origin of the high resistance in phase change superlattice