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Ta-doped SnO$_2$ films with high conductivity and high optical transparencyhave been successfully fabricated using rf-sputtering method and theirelectrical transport properties have been investigated. All films revealdegenerate semiconductor (metal) characteristics in electrical transportproperties. For the thick films ($t\sim 1\,\mu \rm{m}$ with $t$ being thethickness) deposited in pure argon, the electron-phonon scattering alone cannotexplain the temperature dependent behaviors of resistivity, the interferenceeffect between electron-phonon and electron-impurity scattering should beconsidered. For the $t\lesssim 36$ nm films, both conductivity and the Hallcoefficient show linear relation with the logarithm of temperature ($\ln T$)from $\sim$100 K down to liquid helium temperature. The $\ln T$ behaviors ofconductivity and Hall coefficient cannot be explained by the Altshuler-Aronovtype electron-electron interaction effect, but can be quantitativelyinterpreted by the electron-electron interaction effects in the presence ofgranularity. Our results not only provide strong supports for the theoreticalresults on the electron-phonon-impurity interference effect, but also confirmthe validity of the theoretical predictions of charge transport in granularmetals in strong coupling regime.

Electrical transport properties of thick and thin Ta-doped SnO$_2$ films