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We demonstrate selective area epitaxy of GaAs films using patterned graphenemasks on a Ge (001) substrate. The GaAs selectively grows on exposed regions ofthe Ge substrate, for graphene spacings as large as 10 microns. The selectivityis highly dependent on the growth temperature and annealing time, which weexplain in terms of temperature dependent sticking coefficients and surfacediffusion. The high nucleation selectivity over several microns setsconstraints on experimental realizations of remote epitaxy.

Selective area epitaxy of GaAs films using patterned graphene on Ge