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In a blueprint for topological electronics, edge state transport in atopological insulator material can be controlled by employing a gate-inducedtopological quantum phase transition. Here, by studying the width dependence ofelectronic properties, it is inferred that zigzag-Xene nanoribbons arepromising materials for topological electronics with a display of uniquephysical characteristics associated with the intrinsic band topology and thefinite-size effects on gate-induced topological switching. First, due tointertwining with intrinsic band topology-driven energy-zero modes in thepristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbonsremain gapless and protected against backward scattering even with finiteinter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hallmaterial turns into a 1D topological metal. Second, mainly due to width- andmomentum-dependent tunability of the gate-induced inter-edge coupling, thethreshold-voltage required for switching between gapless and gapped edge statesreduces as the width decreases, without any fundamental lower bound. Third,when the width of zigzag-Xene nanoribbons is smaller than a critical limit,topological switching between edge states can be attained without bulk bandgapclosing and reopening. This is primarily due to the quantum confinement effecton the bulk band spectrum which increases the nontrivial bulk bandgap withdecrease in width. The existence of such protected gapless edge states andreduction in threshold-voltage accompanied by enhancement in the bulk bandgapoverturns the general wisdom of utilizing narrow-gap and wide channel materialsfor reducing the threshold-voltage in a standard field effect transistoranalysis and paves the way toward low-voltage topological devices.

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects