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Single-crystalline silicon is well known to be a poor thermoelectric materialdue to its high thermal conductivity. Most excellent research has focused onways to decrease its thermal conductivity while retaining acceptably largepower factors (PFs). Less effort has been spent to enhance the PF in poly andnanocrystalline silicon, instead. Here we show that in boron-hyperdopednanocrystalline thin films PF may be increased up to 33 mW K$^{-2}$m$^{-1}$ at300 K when hydrogen embedded in the film during deposition is removed. Theresult makes nanocrystalline Si a realistic competitor of Bi$_2$Te$_3$ forlow-temperature heat harvesting, also due to its greater geo-availability andlower cost.

Exceptional Thermoelectric Power Factors in Hyperdoped, Fully Dehydrogenated Nanocrystalline Silicon Thin Films