English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The semiconductor quantum dot nanopillar array in InAs/GaAs was fabricated.In consideration of the quantum dot density, the pillar diameter was determinedas only a few quantum dots were involved in a pillar. The lattice constant of apillar array was optimized such that only one pillar couples to the fiber corewithout any specific manipulation. Such structural consideration regarding thephoton source and the optical setup contributes to the high purity of thesingle-photon generation. For high extraction efficiency of photons from photonsource, we fabricated the metal cavity structure around the pillar array. Thecombination of dry-etching and wet-etching realizes the functionally designedthree-dimensional structure. Such fabrication processes face the realization ofthe well-optimized single-photon emitter.

Semiconductor Nanopillar as a Single-Photon Emitter and its Optimal Design