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Multi-tip scanning tunneling microscopy (STM) is a powerful method to performcharge transport measurements at the nanoscale. With four STM tips positionedon the surface of a sample, four-point resistance measurements can be performedin dedicated geometric configurations. Here, we present an alternative to themost often used scanning electron microscope (SEM) imaging to infer thecorresponding tip positions. After initial coarse positioning monitored by anoptical microscope, STM scanning itself is used to determine the inter-tipdistances. A large STM overview scan serves as a reference map. Recognition ofthe same topographic features in the reference map and in small scale imageswith the individual tips allows to identify the tip positions with an accuracyof about 20 nm for a typical tip spacing of ~1 $\mu$m. In order to correct foreffects like the non-linearity of the deflection, creep and hysteresis of thepiezo-electric elements of the STM, a careful calibration has to be performed.

Nanoscale tip positioning with a multi-tip scanning tunneling microscope using topography images