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High-quality III-V narrow band gap semiconductor materials with strongspin-orbit coupling and large Lande g-factor provide a promising platform fornext-generation applications in the field of high-speed electronics,spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrowband gap, high carrier mobility, and a small effective mass, and thus is veryappealing in this context. In fact, this material has attracted tremendousattention in recent years for the implementation of topological superconductingstates supporting Majorana zero modes. However, high-quality heteroepitaxialtwo-dimensional (2D) InSb layers are very diffcult to realize owing to thelarge lattice mismatch with all commonly available semiconductor substrates. Analternative pathway is the growth of free-standing single-crystalline 2D InSbnanostructures, the so-called nanoflags. Here we demonstrate fabrication ofballistic Josephson-junction devices based on InSb nanoflags with Ti/Nbcontacts that show gate-tunable proximity-induced supercurrent up to 50 nA at250 mK and a sizable excess current. The devices show clear signatures ofsubharmonic gap structures, indicating phase-coherent transport in the junctionand a high transparency of the interfaces. This places InSb nanoflags in thespotlight as a versatile and convenient 2D platform for advanced quantumtechnologies.

Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions