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A process for growing gallium nitride (GaN) vertical p-i-n homojunctions on(111) silicon (Si) substrates using metalorganic chemical vapor deposition(MOCVD) was developed, and a triple mesa etch technique was used to fabricateefficient betavoltaic energy converters. Monte Carlo simulation platform CASINOwas used to model beta radiation penetration into GaN to aid device design. Theresulting devices were tested under irradiation from a scanning electronmicroscope (SEM) electron beam (e-beam) tuned to imitate the energies of the63Ni beta emission spectrum. Based on current-voltage (I-V) measurements takenunder e-beam illumination, a maximum open-circuit voltage of 412 mV and amaximum short-circuit current density of 407 nA/cm2 were measured. A high fillfactor (FF) of 0.77 and power conversion efficiency of 6.6% were obtained.Additionally, the proposed triple mesa etch technique used to create thesebetavoltaics has potential for further use in fabricating many types ofelectronic devices using a wide variety of material platforms.

Electron Beam Irradiation of Gallium Nitride-on-Silicon Betavoltaics Fabricated with a Triple Mesa Etch