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A non-uniform capacitance profile in the channel of a THz field-effecttransistor (TeraFET) could significantly improve the THz detection performance.The analytical solutions and simulations of the hydrodynamic equations for theexponentially varying capacitance versus distance showed ~10% increase in theresponsivity for the 130 nm Si TeraFETs in good agreement with numericalsimulations. Using the numerical solutions of the hydrodynamic equations, wecompared three different Cg configurations (exponential, linear and sawtooth).The simulations showed that the sawtooth configuration provides the largestresponse tunability. We also compared the effects of the non-uniformcapacitance profiles for Si, III-V, and p-diamond TeraFETs. The resultsconfirmed a great potential of p-diamond for THz applications. Varying thethreshold voltage across the channel could have an effect similar to that ofvarying the gate-to-channel capacitance. The physics behind the demonstratedimprovement in THz detection performance is related to breaking the channelsymmetry by device geometry of composition asymmetry.

TeraFET terahertz detectors with spatially non-uniform gate capacitances