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The new generation of two-dimensional (2D) materials has shown a broad rangeof applications for optical and electronic devices. Understanding theproperties of these materials when integrated with the more traditionalthree-dimensional (3D) semiconductors is an important challenge for theimplementation of ultra-thin electronic devices. Recent observations have shownthat by combining MoS$_2$ with GaAs it is possible to develop high qualityphotodetectors and solar cells. Here, we present a study of the effects ofintrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on thephotoluminescence of monolayer MoS$_2$. We observe a decrease of an order ofmagnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAsheterojunctions, when compared to a control sample consisting of a MoS$_2$monolayer isolated from GaAs by a few layers of hexagonal boron nitride. Wealso see a dependence of the trion to A-exciton emission ratio in thephotoluminescence spectra on the type of substrate, a dependence that we relateto the static charge exchange between MoS$_2$ and the substrates when thejunction is formed. Scanning Kelvin probe microscopy measurements of theheterojunctions suggest type-I band alignments, so that excitons generated onthe MoS$_2$ monolayer will be transferred to the GaAs substrate. Our resultsshed light on the charge exchange leading to band offsets in 2D/3Dheterojunctions which play a central role in the understanding and furtherimprovement of electronic devices.

Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs