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In this paper, we study the internal quantum efficiency and lasing thresholdof AlGaN/GaN separate confinement heterostructures designed for ultravioletlaser emission. We discuss the effect of carrier localization and carrierdiffusion on the optical performance. The implementation of graded indexseparate confinement heterostructures results in an improved carrier collectionat the multi-quantum well, which facilitates population inversion and reducesthe lasing threshold. However, this improvement is not correlated with theinternal quantum efficiency of the spontaneous emission. We show that carrierlocalization at alloy inhomogeneities results in an enhancement of theradiative efficiency but does not reduce the laser threshold, more sensitive tothe carrier injection efficiency.

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission