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We present a mid-IR ($\lambda \approx$ 8.3 $\mu$m) quantum well infraredphotodetector (QWIP) fabricated on a mid-IR transparent substrate, allowingphotodetection with illumination from either the front surface or through thesubstrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIPheterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted ona mid-IR transparent ZnSe substrate. Metallic stripes are symmetricallypatterned by e-beam lithography on both sides of the active region. Thedetector spectral coverage spans from $\lambda \approx 7.15$ $\mu$m to $\lambda\approx 8.7$ $\mu$m by changing the stripe width L - from L = 1.0 $\mu$m to L =1.3 $\mu$m - thus frequency-tuning the optical cavity mode. Both micro-FTIRpassive optical characterizations and photocurrent measurements of the two-portsystem are carried out. They reveal a similar spectral response for the twodetector ports, with an experimentally measured T$_{BLIP}$ of $\approx$ 200K.

A "Janus" double sided mid-IR photodetector based on a MIM architecture