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We report the effect of 4f electron doping on structural, electrical andmagneto-transport properties of Dy doped half Heusler Y1-x(Dy)xPdBi (x =0, 0.2,0.5, 1) thin films grown by pulsed laser deposition. The Dy doping leads tolattice contraction which increases from 0% for the parent x =0 sample toapprox 1.3% for x=1 sample with increase in Dy doping. The electrical transportmeasurements show a typical semi-metallic behaviour in the temperature range 3Kto 300K and a sharp drop in resistivity at low temperatures (less than 3K) forall the samples. Magnetotransport measurements and Shubnikov de-Hassoscillations at high magnetic fields demonstrate that for these topologicallynon-trivial samples, Dy doping induced lattice contraction plays an active rolein modifying the Fermi surface, carrier concentration and the effectiveelectron mass. There is an uniform suppression of the onset ofsuperconductivity with increased Dy doping which is possibly related to theincreasing local exchange field arising from the 4f electrons in Dy. Ourresults indicate that we can tune various band structure parameters of YPdBi byf electron doping and strained thin films of Y1-x(Dy)xPdBi show surfacedominated relativistic carrier transport at low temperatures.

Structural and transport properties of 4f electron doped Y1-x(Dy)xPdBi topological semi-metallic thin films