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We predict the self-excitation of terahertz (THz) oscillations due to theplasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors(G-FET). The instability is associated with the Coulomb drag of thequasi-equilibrium electrons in the gated channel by the injected ballisticelectrons resulting in a positive feedback between the amplified draggedelectrons current and the injected current. The plasma excitations arise whenthe drag effect is sufficiently strong. The drag efficiency and the plasmafrequency are determined by the quasi-equilibrium electrons Fermi energy (i.e.,by their density). The conditions of the terahertz plasma oscillationself-excitation can be realized in the G-FETs with realistic structuralparameters at room temperature enabling the potential G-FET-based radiationsources for the THz applications.

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection