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In this work, doping-defect interactions relevant to self-compensation inp-type GaN were investigated using atom probe tomography. The 3D visualizationof ion distribution revealed the formation of spherical Mg-rich clusters andthe segregation of Mg dopant towards dislocations in MOCVD-grown GaN:Mg.Impurities related to self-compensation, such as oxygen and hydrogen, wereidentified and detected adjacent to Mg-rich dislocations. Crystal stoichiometryaround the defect regions was investigated to understand how the defects canserve as traps and influence dopant diffusion. Non-stoichiometric regions ofN:Ga were found adjacent to Mg-rich dislocations and overlapping with someMg-rich clusters, indicating potential traps. Variations in N:Ga were notproportional to the Mg content, suggesting that the microfeatures (clusters anddislocations) interact differently with local chemistry. Techniques fordefining the quality of an APT experiment through invalidation of artifacts arealso demonstrated. Mg-rich defects and variations in N:Ga were found to beindependent of artifacts related to the evaporation field in APT.

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography