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Manipulating the strain induced poly-domains and phase transition incorrelated oxide material are important for high performance devicesfabrication. Though the electronic transport in the strained oxide film atmacroscopic scales can be directly measured, the anisotropic electronic stateand the controllable phase separation cross the insulator-to-metal transitionwithin nanoscale size are still elusive. Here, we selected VO2 crystal film asa prototypical oxide and achieved the manipulation of anisotropy electronicphase separation via injecting He+ nanobeam into VO2 film at room temperature.In addition, this nanoscale phase separation was directly visualized byinfrared near-field imaging measurements, showing the pronounced and uniquecR-axis dependent anisotropy on VO2 surface. Our results offered new insightstowards understanding the anisotropic nanoscale phase separation in strainedmetal oxide films.

Manipulating the anisotropic phase separation in strained VO2 epitaxial films by nanoscale ion-implantation