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The optical properties of silicon can be greatly tuned by applying strain andopening new perspectives, particularly in applications where infrared is key.In this work, we use a recent model for the indirect light absorption ofsilicon and include the effects of tensile and compressive uniaxial strains.The model is based on material properties such as the bandgap, the conductionand valence band density-of-states effective masses, and the phononfrequencies, which are obtained from first principles including strain up to+2% along the [110] and [111] directions. We show that the limit of absorptioncan increase from 1.14 (1.09) to 1.35 $\mu$m (0.92 eV) under 2% strain and thatthe absorption increases by a factor of 55 for the zero-strain cutoffwavelength of 1.14 $\mu$m when a 2% compressive strain is applied in the [110]direction. We demonstrate that this effect is mainly due to the impact ofstrain on the electronic bandgaps of silicon, directly followed by the valenceband density-of-states effective mass.

Indirect light absorption model for highly strained silicon infrared sensors