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Silicon can be isotopically enriched, allowing for the fabrication of highlycoherent semiconductor spin qubits. However, the conduction band of bulk Siexhibits a six-fold valley degeneracy, which may adversely impact theperformance of silicon quantum devices. To date, the spatial characterizationof valley states in Si remains limited. Moreover, techniques for probing valleystates in functional electronic devices are needed. We describe here acryogen-free scanning gate microscope for the characterization ofSi/Si$_{0.7}$Ge$_{0.3}$ quantum devices at mK temperatures. The microscope isbased on the Pan-walker design, with coarse positioning piezo stacks and a finescanning piezo tube. A tungsten microscope tip is attached to a tuning fork foractive control of the tip-to-sample distance. To reduce vibration noise fromthe pulse tube cooler, we utilize both active and passive vibration isolationmechanisms, and achieve a root-mean-square noise in $z$ of $\sim$ 2 nm. Ourmicroscope is designed to characterize fully functioningSi/Si$_{0.7}$Ge$_{0.3}$ quantum devices. As a proof of concept, we use themicroscope to manipulate the charge occupation of a Si quantum dot, opening upa range of possibilities for the exploration of quantum devices and materials.

Cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at milli-Kelvin temperatures