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The influence of Ga incorporation into cubic In$_2$O$_3$ on the electronicand vibrational properties is discussed for (In$_{1-x}$,Ga$_x$)$_2$O$_3$ alloyfilms grown by molecular beam epitaxy. Using spectroscopic ellipsometry, alinear dependence of the absorption onset on the Ga content $x$ is found with ablueshift of up to 150 meV for $x = 0.1$. Consistently, the fundamental bandgap exhibits a blueshift as determined by hard X-ray photoelectronspectroscopy. The dependence of the absorption onset and the effective electronmass on the electron concentration is derived from the infrared dielectricfunctions for a Sn doped alloy film. The influence of alloying on phonon modesis analyzed on the basis of Raman spectroscopic measurements. The frequenciesof several phonon modes are identified as sensitive measures for thespectroscopic determination of the Ga content.

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)$_2$O$_3$ alloy films