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We report on the combination of current-induced spin-orbit torques and giantmagnetoresistance in a single device to achieve all-electrical write and readout of the magnetization. The device consists of perpendicularly magnetizedTbCo and Co layers separated by a Pt or Cu spacer. Current injection throughsuch layers exerts spin-orbit torques and switches the magnetization of the Colayer while the TbCo magnetization remains fixed. Subsequent current injectionof lower amplitude senses the relative orientation of the magnetization of theCo and TbCo layers, which results in two distinct resistance levels forparallel and antiparallel alignment due to the current-in-plane giantmagnetoresistance effect. We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt. This type of devices offers analternative route to a two terminal spintronic memory that can be fabricatedwith moderate effort.

A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance