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In recent years, resistive RAM often referred to as memristor is activelypursued as a replacement for nonvolatile-flash memory due to its superiorcharacteristics such as high density, scalability, low power operation, highendurance, and fast operating speed. However, one of the challenges that needto be overcome is the loss of retention for both ON- and OFF-states; theretention loss. While various models are proposed to explain the retention lossin memristors consisting of a switching layer, in this paper, we propose thatthe nucleation of clusters made of electrical charges, charge-clusters, in theswitching layer acts as a potential root cause for the retention loss. Thenucleation results from localized electric-field produced intermittently duringcyclic switching operations. We use the phase-field method to illustrate howthe nucleation of charge-clusters gives rise to the retention loss. Our resultssuggest that the degree at which the retention loss arises is linked to thenumber of cyclic switching operations since the probability at which nucleationcenters form increases with the number of cycle switching operations, which isconsistent with a range of experimental findings previously reported.

Impact of the nucleation of charge clusters on the retention of memristors: a self-consistent phase field computational study