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High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual ofthe AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights intohole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They arean important step towards high-speed and high-power complementary electronicswith wide-bandgap semiconductors. These technologically and scientificallyrelevant 2D hole gases are perceived to be not as robust as the 2DEGs becausestructurally similar heterostructures exhibit wide variations of the holedensity over $\Delta p_s >$ 7 x 10$^{13}$ cm$^{-2}$, and low mobilities. Inthis work, we uncover that the variations are tied to undesired dopantimpurities such as Silicon and Oxygen floating up from the nucleationinterface. By introducing impurity blocking layers (IBLs) in the AlN bufferlayer, we eliminate the variability in 2D hole gas densities and transportproperties, resulting in a much tighter-control over the 2DHG densityvariations to $\Delta p_s \leq$ 1 x 10$^{13}$ cm$^{-2}$ across growths, and a3x boost in the Hall mobilities. These changes result in a 2-3x increase inhole conductivity when compared to GaN/AlN structures without IBLs.

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers