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We report on the non-destructive measurement of Young's modulus of thin-filmsingle crystal beta gallium oxide (beta-Ga2O3) out of its nanoscale mechanicalstructures by measuring their fundamental mode resonance frequencies. From themeasurements, we extract Young's modulus in (100) plane, EY,(100) =261.4+/-20.6 GPa, for beta-Ga2O3 nanoflakes synthesized by low-pressurechemical vapor deposition (LPCVD), and Young's modulus in [010] direction,EY,[010] = 245.8+/-9.2 GPa, for beta-Ga2O3 nanobelts mechanically cleaved frombulk beta-Ga2O3 crystal grown by edge-defined film-fed growth (EFG) method. TheYoung's moduli extracted directly on nanomechanical resonant device platformsare comparable to theoretical values from first-principle calculations andexperimentally extracted values from bulk crystal. This study yields importantquantitative nanomechanical properties of beta-Ga2O3 crystals, and helps pavethe way for further engineering of beta-Ga2O3 micro/nanoelectromechanicalsystems (M/NEMS) and transducers.

Young's Modulus and Corresponding Orientation in \beta-Ga2O3 Thin Films Resolved by Nanomechanical Resonators