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Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) inducesign-changing anomalous Hall effect (AHE). Recently, hump structures have beenreported in the Hall resistivity of SRO thin films, especially in theultra-thin regime. We investigate the AHE and hump structure in the Hallresistivity of SRO ultra-thin films with an SrTiO$_3$ (STO) capping layer andionic liquid gating. STO capping results in sign changes in the AHE andmodulation of the hump structure. In particular, the hump structure in the Hallresistivity is strongly modulated and even vanishes in STO-capped 4 unit cell(uc) films. In addition, the conductivity of STO-capped SRO ultra-thin films isgreatly enhanced with restored ferromagnetism. We also performed ionic liquidgating to modulate the electric field at SRO/STO interface. Drastic changes inthe AHE and hump structure are observed with different gate voltages. Our studyshows that the hump structure as well as the AHE can be controlled by tuninginversion symmetry and the electric field at the interface.

Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO$_3$ films