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Perpendicularly magnetized films showing small saturation magnetization,$M_\mathrm{s}$, are essential for spin-transfer-torque writing typemagnetoresistive random access memories, STT-MRAMs. An intermetallic compound,{(Mn-Cr)AlGe} of the Cu$_2$Sb-type crystal structure was investigated, in thisstudy, as a material showing the low $M_\mathrm{s}$ ($\sim 300$ kA/m) andhigh-perpendicular magnetic anisotropy, $K_\mathrm{u}$. The layer thicknessdependence of $K_\mathrm{u}$ and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGe$|$MgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-$K_\mathrm{u}$ inthe thickness range of a few nanometer. Optimum Mg-insertion thicknesses were1.4 and 3.0 nm for the bottom and the top interfaces, respectively, which wererelatively thick compared to results in similar insertion effect investigationson magnetic tunnel junctions reported in previous studies. The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers. The values of $K_\mathrm{u}$ were about $7 \times 10^5$ and $2\times 10^5$ J/m$^3$ at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses. The$K_\mathrm{u}$ at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the $M_\mathrm{s}$ value is one third orless smaller than those of the CoFeB films. The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.

Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates