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We investigate structural and transport properties of highly Ru-deficientSrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3substrates. To distinguish the influence of the two types of disorders in thefilms, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3thin films with various thicknesses (t = 1-60 nm) were prepared. It was foundthat the influence of the former dominates the electrical and magneticproperties when t > 5-10 nm, while that of the latter does when t < 5-10 nm.Structural characterizations revealed that the crystallinity, in terms of theSr and O sublattices, of SrRu0.7O3 thin films, is as high as that of theultrahigh-quality SrRuO3 ones. The Curie temperature (TC) analysis elucidatedthat SrRu0.7O3 (TC = 140 K) is a material distinct from SrRuO3 (TC = 150 K).Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallicconduction when t > 5 nm. In high-field magnetoresistance measurements, thefascinating phenomenon of Weyl fermion transport was not observed for theSrRu0.7O3 thin films irrespective of thickness, which is in contrast to thestoichiometric SrRuO3 films. The (magneto)transport properties suggest that apicture of carrier scattering due to the Ru vacancies is appropriate forSrRu0.7O3, and also that proper stoichiometry control is a prerequisite toutilizing the full potential of SrRuO3 as a magnetic Weyl semimetal andtwo-dimensional spin-polarized system. Nevertheless, the large tolerance in Rucomposition (30 %) to metallic conduction is advantageous for some practicalapplications where SrRu1-xO3 is exploited as an epitaxial conducting layer.

aip advances

Structural and transport properties of highly Ru-deficient SrRu0.7O3  thin films prepared by molecular beam epitaxy: comparison with stoichiometric  SrRuO3