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Tuning thermal transport in semiconductor nanostructures is of greatsignificance for thermal management in information and power electronics. Withexcellent transport properties, such as ballistic transport, immunity to pointdefects and disorders, and forbidden backscattering, topological phonon surfacestates show remarkable potential in addressing this issue. Herein, topologicalphonon analyses are performed on hexagonal wurtzite GaN to check thetopological characteristics of phonons. And other nitrides of the same family,i.e., AlN and AlGaN alloy, are also calculated from a topological phonon phasetransition perspective. With the aid of first-principle calculations andtopological phonon theory, Weyl phonon states, which host surfaces stateswithout backscattering, are investigated for all these materials. The resultsshow that there is no nontrivial topological phonon state in GaN. However, byintroducing Al atoms, i.e., in wurtzite type AlN and AlGaN, more than one Weylphonon point is found, confirmed by obvious topological characteristics,including non-zero integer topological charges, source/sink in Berry curvaturedistributions, surface local density of states and surface arcs. As AlN andAlGaN are typical materials in AlGaN/GaN heterostructure based electronics, theexistence of topological phonon states in them will benefit thermal managementby facilitating the design of one-way interfacial phonon transport withoutbackscattering.

Topological effects of phonons in GaN and AlxGa1-xN: A potential perspective for tuning phonon transport