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(Si)GeSn semiconductors are finally coming of age after a long gestationperiod. The demonstration of device quality epi-layers and quantum-engineeredheterostructures has meant that tunable all-group IV Si-integrated infraredphotonics is now a real possibility. Notwithstanding the recent excitingdevelopments in (Si)GeSn materials and devices, this family of semiconductorsis still facing serious limitations that need to be addressed to enablereliable and scalable applications. The main outstanding challenges include thedifficulty to grow high crystalline quality layers and heterostructures at thedesired Sn content and lattice strain, preserve the material integrity duringgrowth and throughout device processing steps, and control doping and defectdensity. Other challenges are related to the lack of optimized device designsand predictive theoretical models to evaluate and simulate the fundamentalproperties and performance of (Si)GeSn layers and heterostructures. ThisPerspective highlights key strategies to circumvent these hurdles and bringthis material system to maturity to create far-reaching new opportunities forSi-compatible infrared photodetectors, sensors, and emitters for applicationsin free-space communication, infrared harvesting, biological and chemicalsensing, and thermal imaging.

Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors