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A tuning of Fermi level (E$_F$) near Weyl points is one of the promisingapproaches to realize large anomalous Nernst effect (ANE). In this work, weintroduce an efficient approach to tune E$_F$ for the Co$_2$MnAl Weyl semimetalthrough a layer-by-layer combinatorial deposition of Co$_2$MnAl$_{1-x}$Si$_x$(CMAS) thin film. A single-crystalline composition-spread film with x variedfrom 0 to 1 was fabricated. The structural characterization reveals theformation of single-phase CMAS alloy throughout the composition range with agradual improvement of L2$_1$ order with x similar to the co-sputtered singlelayered film, which validates the present fabrication technique. Hard X-rayphotoemission spectroscopy for the CMAS composition-spread film directlyconfirmed the rigid band-like E$_F$ shift of approximately 0.40 eV towards thecomposition gradient direction from x = 0 to 1. The anomalous Ettingshauseneffect (AEE), the reciprocal of ANE, has been measured for whole x range usinga single strip along the composition gradient using the lock-in thermographytechnique. The similarity of the x dependence of observed AEE and ANE signalsclearly demonstrates that the AEE measurement on the composition spread film isan effective approach to investigate the composition dependence of ANE of Weylsemimetal thin films and realize the highest performance without fabricatingseveral films, which will accelerate the research for ANE-based energyharvesting

Combinatorial tuning of electronic structure and thermoelectric properties in Co$_2$MnAl$_{1-x}$Si$_x$ Weyl semimetals