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Hyperdoping with gallium (Ga) has been established as a route to observesuperconductivity in silicon (Si). The relatively large critical temperatures(T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive forcryogenic circuit applications, particularly for scalable hybridsuperconductor--semiconductor platforms. However, the robustness of Si:Gasuperconductivity at millikelvin temperatures is yet to be evaluated. Here, wereport the presence of a reentrant resistive transition below T$_{\rm c}$ forSi:Ga whose strength strongly depends on the distribution of the Ga clustersthat precipitate in the implanted Si after annealing. By monitoring thereentrant resistance over a wide parameter space of implantation energies andfluences, we determine conditions that significantly improve the coherentcoupling of Ga clusters, therefore, eliminating the reentrant transition evenat temperatures as low as 20~mK.

Tailoring Superconducting Phases Observed in Hyperdoped Si:Ga for Cryogenic Circuit Applications