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Solid-phase epitaxy (SPE) and other three-dimensional epitaxialcrystallization processes pose challenging structural and chemicalcharacterization problems. The concentration of defects, the spatialdistribution of elastic strain, and the chemical state of ions each vary withnanoscale characteristic length scales and depend sensitively on the gasenvironment and elastic boundary conditions during growth. The lateral orthree-dimensional propagation of crystalline interfaces in SPE has nanoscale orsubmicron characteristic distances during typical crystallization times. An insitu synchrotron hard x-ray instrument allows these features to be studiedduring deposition and crystallization using diffraction, resonant scattering,nanobeam and coherent diffraction imaging, and reflectivity. The instrumentincorporates a compact deposition system allowing the use ofshort-working-distance x-ray focusing optics. Layers are deposited usingradio-frequency magnetron sputtering and evaporation sources. The depositionsystem provides control of the gas atmosphere and sample temperature. Thesample is positioned using a stable mechanical design to minimize vibration anddrift and employs precise translation stages to enable nanobeam experiments.Results of in situ x-ray characterization of the amorphous thin film depositionprocess for a SrTiO3/BaTiO3 multilayer illustrate implementation of thisinstrument.

Instrument for in situ hard x-ray nanobeam characterization during epitaxial crystallization and materials transformations