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Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning. Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of ~80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer. Specific features of the observed MTJs aresymmetric differential conductance (dI/dV) spectra for the bias polarity andplateau-like deep local minima in dI/dV (parallel configuration) at |V| =0.2~0.5 V. At 3K, fine structures with two dips emerge in the plateau-likedI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.

Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions