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We implement silicon quantum dot devices with two layers of gate electrodesusing a self-alignment technique, which allows for ultra-small gate lengths andintrinsically perfect layer-to-layer alignment. In a double quantum dot system,we investigate hole transport and observe current rectification due to Paulispin blockade. Magnetic field measurements indicate that hole spin relaxationis dominated by spin-orbit interaction, and enable us to determine theeffective hole $g$-factor $\simeq1.6$. From an avoided singlet-tripletcrossing, occurring at high magnetic field, the spin-orbit coupling strength$\simeq0.27$meV is obtained, promising fast and all-electrical spin control.

Silicon quantum dot devices with a self-aligned second gate layer