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The engineering of defects in diamond, particularly nitrogen-vacancy (NV)centers, is important for many applications in quantum science. A materialsscience approach based on chemical vapor deposition (CVD) growth of diamond andin-situ nitrogen doping is a promising path toward tuning and optimizing thedesired properties of the embedded defects. Herein, with the coherence of theembedded defects in mind, we explore the effects of substrate miscut on thediamond growth rate, nitrogen density, and hillock defect density, and wereport an optimal angle range between 0.66{\deg} < {\theta} < 1.16{\deg} forthe purposes of engineering coherent ensembles of NV centers in diamond. Weprovide a model that quantitatively describes hillock nucleation in thestep-flow regime of CVD growth, shedding insight on the physics of hillockformation. We also report significantly enhanced incorporation of nitrogen athillock defects, opening the possibility for templatinghillock-defect-localized NV center ensembles for quantum applications.

Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth