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We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$using independent contributions from temperature and electric field to simulatephase change memory devices and Ovonic threshold switches. 3D, 2D-rotational,and 2D finite element simulations of pillar cells capture threshold switchingand show filamentary conduction in the on-state. The model can be tuned tocapture switching fields from ~5 to 40 MV/m at room temperature using thetemperature dependent electrical conductivity measured for metastable amorphousGST; lower and higher fields are obtainable using different temperaturedependent electrical conductivities. We use a 2D fixed out-of-plane-depthsimulation to simulate an Ovonic threshold switch in series with a$Ge_{2}Sb_{2}Te_{5}$ phase change memory cell to emulate a crossbar memoryelement. The simulation reproduces the pre-switching current and voltagecharacteristics found experimentally for the switch + memory cell, isolatedswitch, and isolated memory cell.

journal of applied physics

Field Dependent Conductivity and Threshold Switching in Amorphous  Chalcogenides -- Modeling and Simulations of Ovonic Threshold Switches and  Phase Change Memory Devices