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While a linear growth behavior is one of the fingerprints of textbook atomiclayer deposition processes, the growth often deviates from that behavior in theinitial regime, i.e. the first few cycles of a process. To properly understandthe growth behavior in the initial regime is particularly important forapplications that rely on the exact thickness of very thin films. Thedetermination of the thicknesses of the initial regime, however, often requiresspecial equipment and techniques that are not always available. We propose athickness determination method that is based on X-ray reflectivity (XRR)measurements on double layer structures, i.e. substrate/base layer/top layer.XRR is a standard thin film characterization method. Utilizing the inherentproperties of fast Fourier transformation in combination with a multi-Gaussianfitting routine permits the determination of thicknesses down to $t \approx 2$nm. We evaluate the boundaries of our model, which are given by the separationand full width at half maximum of the individual Gaussians. Finally, we compareour results from two layer stacks with data from X-ray fluorescencespectroscopy, which is a standard method for measuring ultra thin films.

Fast fourier transform and multi-Gaussian fitting of XRR data to determine the thickness of ALD grown thin films within the initial growth regime