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Lossy dielectrics are a significant source of decoherence in superconductingquantum circuits. In this report, we model and compare the dielectric loss inbulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al)superconducting coplanar waveguide (CPW) resonators. We fabricate isotropicallytrenched resonators to produce a series of device geometries that accentuate aspecific dielectric region's contribution to resonator quality factor. Whileeach dielectric region contributes significantly to loss in TiN devices, themetal-air interface dominates the loss in the Al devices. Furthermore, weevaluate the quality factor of each TiN resonator geometry with and without apost-process hydrofluoric (HF) etch, and find that it reduced losses from thesubstrate-air interface, thereby improving the quality factor.

Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators