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Gated molybdenum disulphide (MoS2) exhibits a rich phase diagram uponincreasing electron doping, including a superconducting phase, a polaronicreconstruction of the bandstructure, and structural transitions away from the2H polytype. The average time between two charge-carrier scattering events -the scattering lifetime - is a key parameter to describe charge transport andobtain physical insight in the behavior of such a complex system. In this work,we combine the solution of the Boltzmann transport equation (based on ab-initiodensity functional theory calculations of the electronic bandstructure) withthe experimental results concerning the charge-carrier mobility, in order todetermine the scattering lifetime in gated MoS2 nanolayers as a function ofelectron doping and temperature. From these dependencies, we assess the majorsources of charge-carrier scattering upon increasing band filling, and discovertwo narrow ranges of electron doping where the scattering lifetime is stronglysuppressed. We indentify the opening of additional intervalley scatteringchannels connecting the simultaneously-filled K/K' and Q/Q' valleys in theBrillouin zone as the source of these reductions, which are triggered by thetwo Lifshitz transitions induced by the filling of the high-energy Q/Q' valleysupon increasing electron doping.

Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels