English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The growth window of epitaxial Hf0.5Zr0.5O2 is established taking intoaccount the main ferroelectric properties that films have to presentsimultaneously: high remanent polarization, low fatigue and long retention.Defects in the film and imprint field depend on deposition temperature andoxygen pressure, with an impact on fatigue and retention, respectively. Fatigueincreases with substrate temperature and pressure, and retention is short iflow temperature is used. The growth window of epitaxial stabilization offerroelectric Hf0.5Zr0.5O2 is narrower when all major ferroelectric properties(remanence, endurance and retention) are considered, but deposition temperatureand pressure ranges are still sufficiently wide.

Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films