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We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing$t_\mathrm{InAs}$ (from 9 to 3 nm) due to the enhancement of the interfacescattering. This is the first demonstration of the spin-valve effect inFe-doped FMS heterostructures, paving the way for device applications of thesehigh- $T_\mathrm{C}$ FMSs.

Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature